Method of manufacturing dielectric layer and method of manufacturing liquid jet head

ABSTRACT

A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method of manufacturing a dielectricfilm made of a dielectric material including a piezoelectric material,and to a method of manufacturing a liquid jet head including apiezoelectric element having a piezoelectric film made of apiezoelectric material.

2. Description of the Related Art

A piezoelectric element used in a liquid jet head and the like is anelement formed by sandwiching a piezoelectric film made of apiezoelectric material exhibiting an electromechanical conversion effectwith two electrodes. The piezoelectric film is made of a crystallizedpiezoelectric ceramic, for example.

Meanwhile, a typical liquid jet head using such a piezoelectric elementis an inkjet recording head, which includes a vibration plateconstituting part of a pressure generating chamber that communicateswith a nozzle orifice for ejecting ink droplets, for example. Thisinkjet recording head is configured to deform this vibration plate byuse of the piezoelectric element to pressurize ink in the pressuregenerating chamber, and thereby to eject ink droplets from the nozzleorifice. There are two types of inkjet recording heads which have beenput to practical use, namely, an inkjet recording head applying apiezoelectric actuator of a longitudinal vibration mode configured toexpand and contract in an axial direction of the piezoelectric element,and an inkjet recording head applying a piezoelectric actuator of aflexural vibration mode. As the inkjet recording head applying theactuator of the flexural vibration mode, there is known an inkjetrecording head in which a uniform piezoelectric film is formed over anentire surface of a vibration plate by use of a deposition technique andthen piezoelectric elements are formed independently for respectivepressure generating chambers by cutting this piezoelectric layer intoshapes corresponding to the pressure generating chambers by use of alithography method, for example.

Meanwhile, a so-called sol-gel method is known as a method of forming apiezoelectric layer constituting a piezoelectric element. Specifically,sol made of an organic metal compound is coated on a substrate formedwith a lower electrode thereon, and the sol is dried and gelated(degreased) to form a precursor film for a piezoelectric body. This stepis performed at least once, and then the precursor film is subjected toa heat treatment at a high temperature and is thereby crystallized. Thepiezoelectric layer (a piezoelectric thin film) having a predeterminedthickness is manufactured by repeating the above-described steps forseveral times (see Patent Document 1, for example).

According to the manufacturing method described above, it is possible toform a piezoelectric layer having a thickness of 1 μm or above, forexample, relatively favorably, and thereby to prevent occurrence ofcracks and the like. However, it is difficult to control a crystallinestate of the piezoelectric layer such as grain size or orientation.Accordingly, the conventional manufacturing method has a problem in thata piezoelectric layer of desired characteristics cannot be obtained.Such a problem is not only limited to piezoelectric films made ofpiezoelectric materials for use in piezoelectric elements for liquid jethead and the like, but similarly exists in dielectric films made ofother dielectric materials.

(Patent Document 1)

Japanese Unexamined Patent Publication No. 9(1997)-223830 (pp. 4 to 6)

SUMMARY OF THE INVENTION

The present invention has been made in consideration of the foregoingproblem of the related art. It is an object of the present invention toprovide a method of manufacturing a dielectric film capable ofcontrolling a crystalline state relatively easily and thereby obtainingstable characteristics constantly, and a method of manufacturing aliquid jet head capable of enhancing characteristics of a piezoelectricelement.

To attain the object, a first aspect of the present invention provides amethod of manufacturing a dielectric film including: a coating step ofcoating sol made of an organic metal compound and forming a dielectricprecursor film; a drying step of drying the dielectric precursor film; adegreasing step of degreasing the dielectric precursor film; and abaking step of baking the dielectric precursor film to form a dielectricfilm. Here, the drying step includes a first drying step of drying thedielectric precursor film by heating the dielectric precursor film to atemperature lower than a boiling point of a solvent which is a mainsolvent of the sol and then holding the dielectric precursor film at thetemperature for a predetermined period of time, and a second drying stepof drying the dielectric precursor film further by reheating thedielectric precursor film and then holding the dielectric precursor filmat the temperature for a predetermined period of time.

According to the first aspect, it is possible to grow crystals of adielectric film favorably, and to form the dielectric film having adesired crystalline state.

A second aspect of the present invention provides the method ofmanufacturing a dielectric film according to the first aspect, in whichthe method includes the first drying step, the second drying step, thedegreasing step, and the baking step independently.

According to the second aspect, it is possible to grow crystals of adielectric film favorably, and to form the dielectric film having adesired crystalline state.

A third aspect of the present invention provides the method ofmanufacturing a dielectric film according to the first aspect, in whichheating is continuously performed without lowering the temperature in atleast two consecutive steps out of the first drying step, the seconddrying step, the degreasing step, and the baking step.

According to the third aspect, by performing the continuous heatingwithout lowering the temperature in consecutive steps, it is possible toshorten time for heat treatment and to reduce manufacturing costswithout wasting energy for the heating.

A fourth aspect of the present invention provides the method ofmanufacturing a dielectric film according to the third aspect, in whichthe heating is continuously performed without lowering the temperaturein the consecutive steps of the first and second drying steps, thedegreasing step, and the baking step.

According to the fourth aspect, by performing the continuous heatingwithout lowering the temperature in the consecutive steps, it ispossible to further shorten the time for heat treatment and to reducemanufacturing costs without wasting the energy for the heating.

A fifth aspect of the present invention provides the method ofmanufacturing a dielectric film according to the third or fourth aspect,in which at least two consecutive steps out of the first drying step,the second drying step, the degreasing step, and the baking step areperformed by use of a rapid thermal processing (RTP) device.

According to the fifth aspect, it is possible to perform the continuousheating in consecutive steps without lowering the temperature by use ofthe RTP device, to enhance heat uniformity in terms of an in-planedirection of the dielectric precursor film, and thereby to form adielectric film having uniform characteristics in terms of the in-planedirection.

A sixth aspect of the present invention provides the method ofmanufacturing a dielectric film according to any of the first to fifthaspects, in which crystals are subjected to preferred orientation alonga (100) plane of a rhombohedral system by adjusting a temperature to beattained in the second drying step.

According to the sixth aspect, it is possible to form a dielectric filmwhich is excellent in mechanical characteristics by controlling theorientation of the crystals.

A seventh aspect of the present invention provides the method ofmanufacturing a dielectric film according to any of the first to sixthaspects, in which grain sizes are controlled by adjusting a rate oftemperature rise in the second drying step.

According to the seventh aspect, it is possible to form a dielectricfilm having desired grain sizes, and thereby to enhance the mechanicalcharacteristics of the dielectric film.

An eighth aspect of the present invention provides the method ofmanufacturing a dielectric film according to any of the first to seventhaspects, in which the dielectric precursor film is heated to atemperature higher by a range from 100 degrees C. to 300 degrees C. thanthe boiling point of the solvent in the degreasing step.

According to the eighth aspect, it is possible to degrease thedielectric precursor film, and thereby to enhance the characteristics ofa dielectric film.

A ninth aspect of the present invention provides the method ofmanufacturing a dielectric film according to any of the first to eighthaspects, in which the dielectric precursor film is heated to atemperature higher by at least 400 degrees C. than the boiling point ofthe solvent in the baking step.

According to the ninth aspect, it is possible to bake the dielectricprecursor film favorably, and thereby to enhance the characteristics ofa dielectric film.

A tenth aspect of the present invention provides a method ofmanufacturing a liquid jet head including the step of forming apiezoelectric element, in a region opposed to each pressure generatingchamber communicating with each nozzle orifice for ejecting a droplet,through a vibration plate constituting one side of the pressuregenerating chamber. Here, the step of forming a piezoelectric elementincludes the steps of forming a lower electrode film on the vibrationplate, forming a piezoelectric layer on the lower electrode film, andforming an upper electrode film on the piezoelectric layer. Moreover, inthe step of forming a piezoelectric layer, the piezoelectric layercomposed of a plurality of piezoelectric films is laminated byrepeatedly performing a piezoelectric layer forming process of: a stepof coating sol made of an organic metal compound and forming apiezoelectric precursor film; a first drying step of drying thepiezoelectric precursor film by heating the piezoelectric precursor filmto a temperature lower than a boiling point of a solvent which is a mainsolvent of the sol and then holding the piezoelectric precursor film atthe temperature for a predetermined period of time; a second drying stepof further drying the piezoelectric precursor film by heating thepiezoelectric precursor film to a temperature equal to or higher thanthe boiling point of the solvent and then holding the piezoelectricprecursor film at the temperature for a predetermined period of time; adegreasing step of degreasing the piezoelectric precursor film byheating the piezoelectric precursor film to a temperature higher thanthe boiling point of the solvent; and a baking step of baking thepiezoelectric precursor film to crystallize the piezoelectric precursorfilm into the piezoelectric film.

According to the tenth aspect, it is possible to enhance mechanical andelectrical characteristics of a piezoelectric layer, and thereby toenhance a displacement characteristic of the piezoelectric element.

An eleventh aspect of the present invention provides the method ofmanufacturing a liquid jet head according to the tenth aspect, in whichthe method includes the first drying step, the second drying step, thedegreasing step, and the baking step independently.

According to the eleventh aspect, it is possible to grow crystals of apiezoelectric film favorably, and to form the piezoelectric film havinga desired crystalline state.

A twelfth aspect of the present invention provides the method ofmanufacturing a liquid jet head according to the tenth aspect, in whichheating is continuously performed without lowering the temperature in atleast two consecutive steps out of the first drying step, the seconddrying step, the degreasing step, and the baking step.

According to the twelfth aspect, by performing the continuous heatingwithout lowering the temperature in consecutive steps, it is possible toshorten time for heat treatment and to reduce manufacturing costswithout wasting energy for the heating.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an exploded perspective view of a recording head according toEmbodiment 1.

FIG. 2A is a plan view and FIG. 2B is a cross-sectional view of therecording head according to Embodiment 1.

FIGS. 3A to 3D are cross-sectional views showing a manufacturing processof the recording head according to Embodiment 1.

FIGS. 4A to 4C are cross-sectional views showing the manufacturingprocess of the recording head according to Embodiment 1.

FIGS. 5A to 5D are cross-sectional views showing the manufacturingprocess of the recording head according to Embodiment 1.

FIGS. 6A to 6C are cross-sectional views showing the manufacturingprocess of the recording head according to Embodiment 1.

FIG. 7 is a graph showing a temperature profile according to Embodiment1.

FIG. 8 is a view showing a method of measuring orientation strength.

FIGS. 9A to 9C are graphs showing unevenness in the orientation strengthin terms of an in-plane direction of a wafer.

FIG. 10 is a graph showing a relation between a drying temperature andthe orientation strength.

FIG. 11 is a graph showing a relation between the drying temperature anda degree of orientation.

FIG. 12 is a graph showing a relation between an inclination of a (100)plane and the orientation strength.

FIGS. 13A and 13B are scanning electron microscopic images showingcrystalline states of a piezoelectric layer.

FIG. 14 is a graph showing an example of the temperature profile.

FIG. 15 is a graph showing another example of the temperature profile.

FIG. 16 is a view showing positions of temperature measurement in termsof the in-plane direction of the wafer.

FIGS. 17A and 17B are graphs showing unevenness in the temperature interms of the in-plane direction of the wafer.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(Embodiment 1)

FIG. 1 is an exploded perspective view showing an inkjet recording headaccording to Embodiment 1 of the present invention. FIGS. 2A and 2B area plan view and a cross-sectional view of the inkjet recording head ofFIG. 1. As shown in the drawings, a passage-forming substrate 10 is madeof a single crystal silicon substrate having a plane orientation (110)in this embodiment. An elastic film 50 made of silicon dioxidepreviously formed by thermal oxidation and having a thickness in a rangefrom 0.5 to 2 μm is formed on one surface of the passage-formingsubstrate 10. A plurality of pressure generating chambers 12 arearranged in a width direction on the passage-forming substrate 10.Meanwhile, a communicating portion 13 is formed in a region outside inthe longitudinal direction of the pressure generating chambers 12 on thepassage-forming substrate 10, and the communicating portion 13 and therespective pressure generating chambers 12 communicate with one anotherthrough ink supply paths 14 provided for the respective pressuregenerating chambers 12. Here, the communicating portion 13 communicateswith a reservoir portion of a protective plate to be described later,and thereby constitutes part of a reservoir which is a common inkchamber to the respective pressure generating chambers 12. Each of theink supply paths 14 is formed in a narrower width than the width of eachof the pressure generating chambers 12, and thereby maintains constantpassage resistance for ink flowing from the communicating portion 13into the pressure generating chamber 12.

Meanwhile, a nozzle plate 20 having nozzle orifices 21, which aredrilled thereon for communicating with the vicinity of end portions ofthe respective pressure generating chambers 12 at the opposite side tothe ink supply paths 14, is fixed to an opening surface side of thepassage-forming substrate 10 through an adhesive agent, a thermoweldingfilm or the like. Here, the nozzle plate 20 is made of a glass ceramic,a single crystal silicon substrate, stainless steel or the like having athickness in a range from 0.01 to 1 mm and a coefficient of linearexpansion in a range from 2.5 to 4.5 [×10⁻⁶ /degree C.] at a temperatureequal to or below 300 degrees C., for example.

Meanwhile, as described previously, an elastic film 50 made of silicondioxide (SiO₂) and having a thickness of about 1.0 μm, for example, isformed on a side opposite the opening surface of the passage-formingsubstrate 10. An insulation film 55 made of zirconium oxide (ZrO₂)having a thickness of about 0.4 μm, for example, is formed on thiselastic film 50. Moreover, a lower electrode film 60 having a thicknessof about 0.2 μm, for example, a piezoelectric layer 70 having athickness of about 1.0 μm, for example, and an upper electrode film 80having a thickness of about 0.05 μm, for example, are formed andlaminated in a process to be described later, and these constituentscollectively constitute a piezoelectric element 300. Here, thepiezoelectric element 300 means the portion including the lowerelectrode film 60, the piezoelectric layer 70, and the upper electrodefilm 80. In general, one of the electrodes in the piezoelectric elementis defined as a common electrode, and the other electrode and thepiezoelectric layer 70 are patterned in conformity to the respectivepressure generating chambers 12. Moreover, the portion including thepatterned electrode and piezoelectric layer 70 and exhibitingpiezoelectric strain by application of a voltage to the both electrodeswill be herein referred to as a piezoelectric active portion. In thisembodiment, the lower electrode film 60 is used as the common electrodeof the piezoelectric element 300, and the upper electrode film 80 as anindividual electrode of the piezoelectric element 300. However, it ispossible to invert the functions of these electrode films due toconvenience for designing driving circuits or wiring. In any case, thepiezoelectric active portion is formed on each of the pressuregenerating chambers. Meanwhile, the piezoelectric element 300 and avibration plate undergoing displacement by a drive of the piezoelectricelement 300 will be herein collectively referred to as a piezoelectricactuator. Moreover, lead electrodes 90 made of gold (Au) or the like,for example, are connected to the upper electrode films 80 of therespective piezoelectric elements 300 as described above, and voltagesare selectively applied to the respective piezoelectric elements 300through the lead electrodes 90.

Here, the material for the piezoelectric layer 70 constituting thepiezoelectric element 300 as described above may be, for example, aferroelectric and piezoelectric material such as lead zirconate titanate(PZT), or a relaxor ferroelectric material formed by adding metal suchas niobium, nickel, magnesium, bismuth or yttrium to the ferroelectricand piezoelectric material. The composition of the material may beappropriately selected in consideration of intended characteristics,application, and the like of the piezoelectric element 300. For example,the composition may include PbTiO₃ (PT), PbZrO₃ (PZ),Pb(Zr_(x)Ti_(1-x))O₃ (PZT), Pb(Mg_(1/3)Nb_(2/3))O₃—PbTiO₃ (PMN-PT),Pb(Zn_(1/3)Nb_(2/3))O₃—PbTiO₃ (PZN-PT), Pb(Ni_(1/3)Nb_(2/3))O₃—PbTiO₃(PNN-PT), Pb(In_(1/2)Nb_(1/2))O₃—PbTiO₃ (PIN-PT),Pb(Sc_(1/2)Ta_(1/2))O₃—PbTiO₃ (PST-PT), Pb(Sc_(1/2)Nb_(1/2))O₃—PbTiO₃(PSN-PT), BiScO₃—PbTiO₃ (BS-PT), BiYbO₃—PbTiO₃ (BY-PT), and the like.

Meanwhile, a protective plate 30 having a piezoelectric element holdingportion 31 capable of securing a sufficient space in a region facing thepiezoelectric elements 300 so as not to inhibit actions thereof isjoined onto a surface of the passage-forming substrate 10 on thepiezoelectric element 300 side. The piezoelectric elements 300 areformed inside this piezoelectric element holding portion 31, and thusare protected in a state substantially not susceptible to influencesfrom external environments. Moreover, a reservoir portion 32 is providedfor the protective plate 30 in a region corresponding to thecommunicating portion 13 of the passage-forming substrate 10. In thisembodiment, the reservoir portion 32 is provided along the direction ofarrangement of the pressure generating chambers 12 while penetrating theprotective plate 30 in the thickness direction, and is communicated withthe communicating portion 13 of the passage-forming substrate 10 asdescribed above. In this way, the communicating portion 13 and thereservoir portion 32 collectively constitute a reservoir 100 which isthe common ink chamber to the respective pressure generating chambers12.

Meanwhile, a through-hole 33 is provided in a region between thepiezoelectric element holding portion 31 and reservoir portion 32 of theprotective plate 30 so as to penetrate the protective plate 30 in itsthickness direction. Parts of the lower electrode film 60 and heads ofthe lead electrodes 90 are exposed inside this through-hole 33. Althoughit is not illustrated in the drawing, ends of connection wiringextending from a driving IC are connected to the lower electrode film 60and to the lead electrodes 90.

Here, the material for the protective plate 30 may be glass, a ceramicmaterial, metal, resin, or the like. However, it is preferable to formthe protective plate 30 by use of a material having substantially thesame coefficient of thermal expansion as that of the passage-formingsubstrate 10. In this embodiment, the protective plate 30 is formed byuse of a single crystal silicon substrate which is the same material asthe passage-forming substrate 10.

Meanwhile, a compliance plate 40 including a sealing film 41 and afixing plate 42 is joined onto the protective plate 30. The sealing film41 is made of a material having low stiffness and sufficient flexibility(a polyphenylene sulfide (PPS) film having a thickness of 6 μm, forexample). One side of the reservoir portion 32 is sealed by this sealingfilm 41. Meanwhile, the fixing plate 42 is made of a hard material suchas metal (stainless steel (SUS) having a thickness of 30 μm, forexample). A region of this fixing plate 42 opposite to the reservoir 100is completely removed in its thickness direction and is thereby formedinto an opening portion 43. Accordingly, one side of the reservoir 100is sealed only by the flexible sealing film 41.

In the inkjet recording head of this embodiment described above, ink istaken in from unillustrated external ink supplying means, and all of theinterior from the reservoir 100 to the nozzle orifices 21 is filled withthe ink. Then, voltages are applied between the lower electrode film 60and the respective upper electrode films 80 corresponding to thepressure generating chambers 12, whereby the elastic film 50, theinsulation film 55, the lower electrode film 60, and the piezoelectriclayers 70 are subjected to flexural deformation. Accordingly, pressurein each of the pressure generating chambers 12 is increased and inkdroplets are ejected from the nozzle orifice 21.

Now, a method of manufacturing the inkjet recording head as describedabove will be described with reference to FIG. 3A to FIG. 6C. FIG. 3A toFIG. 6C are cross-sectional views in the longitudinal direction of thepressure generating chamber 12. First, as shown in FIG. 3A, apassage-forming substrate wafer 110 which is a silicon wafer issubjected to thermal oxidation in a diffusion furnace set to atemperature of about 1100 degrees C., and a silicon dioxide film 51constituting the elastic film 50 is formed on a surface thereof. In thisembodiment, a relatively thick and stiff silicon wafer having a platethickness of about 625 μm is used as the passage-forming substrate 10.

Subsequently, as shown in FIG. 3B, the insulation film 55 made ofzirconium oxide is formed on the elastic film 50 (the silicon dioxidefilm 51). To be more precise, a zirconium layer is first formed on theelastic film 50 by use of a DC sputtering method, for example, then,this zirconium layer is subjected to thermal oxidation to form theinsulation film 55 made of zirconium oxide.

Next, as shown in FIG. 3C, the lower electrode film 60 is formed bylaminating platinum and iridium on the insulation film 55, for example.Thereafter, this lower electrode film 60 is patterned into apredetermined shape.

Next, the piezoelectric layer 70 made of lead zirconate titanate (PZT),for example, is formed as shown in FIG. 3D. Here, in this embodiment,the piezoelectric layer 70 is formed by use of a so-called sol-gelmethod, in which so-called sol formed by dissolving and dispersing ametal-organic material into a solvent is coated and dried for gelation,and then by baking the material at a high temperature to obtain thepiezoelectric layer 70 made of metal oxide. Here, the material for thepiezoelectric layer 70 is not limited only to lead zirconate titanate.It is also possible to use other piezoelectric materials in relaxorferroelectric materials (such as PMN-PT, PZN-PT or PNN-PT), for example.Moreover, the method of manufacturing the piezoelectric layer 70 is notlimited only to the sol-gel method. It is also possible to use ametal-organic decomposition (MOD) method, for example.

In the concrete procedures for forming the piezoelectric layer 70,firstly, a piezoelectric precursor film 71 which is a PZT precursor filmis formed on the lower electrode film 60 as shown in FIG. 4A.Specifically, the sol containing a metal-organic compound (a solution)is coated on the passage-forming substrate 10 formed with the lowerelectrode film 60 (a coating step). Subsequently, the piezoelectricprecursor film 71 is heated from a room temperature to a temperaturelower than a boiling point of the solvent which is a main solvent of thesol for drying for a predetermined period of time. In this way, thepiezoelectric precursor film 71 is dried by evaporating the solvent ofthe sol (a first drying step).

Here, the main solvent of the sol is not particularly limited. However,it is preferable to use an ethanol solvent, for example. In thisembodiment, 2-n-butoxyethanol having a boiling point of 176 degrees C.is used. Accordingly, in this embodiment, in the first drying step 200shown in FIG. 7, the piezoelectric precursor film 71 is dried by heatingthe coated sol to a temperature of less or equal to temperature equal to176 degrees C. which is the boiling point of the solvent (indicated witha dotted line in the drawing), or to about 170 degrees C., for example,and then holding the piezoelectric precursor film 71 at this temperaturefor about 8 to 10 minutes.

Subsequently, the main solvent of the sol is further evaporated byreheating the piezoelectric precursor film 71, or by heating thepiezoelectric precursor film 71 to a temperature higher than the boilingpoint of the solvent which is the main solvent of the sol and thenholding the piezoelectric precursor film 71 at this temperature for apredetermined period of time in this embodiment, for example, therebydrying the piezoelectric precursor film 71 (a second drying step). Thetemperature to be attained in the second drying step 201 is preferablyset in a range from 178 degrees C. to 180 degrees C. which is higherthan the boiling point of the solvent. Meanwhile, the drying time ispreferably set in a range from 8 to 30 minutes. For example, in thisembodiment, in the second drying step 201 as shown in FIG. 7, thetemperature is raised to about 178 degrees C. which is higher than theboiling point of the solvent, and the piezoelectric precursor film 71was held at this temperature for 15 to 30 minutes. When the temperatureto be attained is set to 180 degrees C., for example, the temperaturemay be held for 8 to 10 minutes.

Moreover, it is preferable to set a rate of temperature rise in a rangefrom 0.5 to 1.5 (degrees C./sec) in this second drying step. Here, the“rate of temperature rise” will be defined as a rate of temperaturechange with time consumed from a temperature higher than a startingtemperature by 20% of a temperature difference which is a differencebetween a temperature when starting the heating (room temperature) andthe attained temperature, until reaching a temperature higher by 80% ofthe temperature difference than the starting temperature. For example,the rate of temperature rise when heating from a room temperature of 25degrees C. up to 100 degrees C. in 50 seconds will be calculated as(100−25)×(0.8−0.2)/50=0.9 (degrees C./sec).

Moreover, a heating device used in the above-described drying steps maybe a clean oven (a diffusion furnace), a baking device, and the like.However, it is preferable to use the baking device in particular. Sincethe clean oven controls the temperature by blowing hot air, thecharacteristic of the piezoelectric precursor film tends to vary interms of the in-plane direction of the passage-forming substrate wafer.

After drying the piezoelectric precursor film 71 in the first and seconddrying steps as described above, the piezoelectric precursor film 71 isfurther degreased for a predetermined period of time in an airatmosphere at a certain temperature (a degreasing step). Here, thedegreasing means to remove organic components in the sol film in theform of NO₂, CO₂, H₂O or the like, for example.

A heating method in the degreasing step is not particularly limited.However, in this embodiment, the passage-forming substrate wafer isplaced on a hot plate through a jig which is an aluminum plate having apredetermined thickness and an outside diameter slightly larger than thepassage-forming substrate, and then the piezoelectric precursor film 71is heated to the predetermined temperature. The temperature to beattained in the degreasing step is preferably higher by a temperatureselected from a range from 100 degrees C. to 300 degrees C. than theboiling point of the solvent which is the main solvent of the sol. Forexample, since the boiling point of the solvent is 176 degrees C. inthis embodiment, the degreasing temperature is set preferably in a rangefrom 276 degrees C. to 476 degrees C., or more preferably in a rangefrom 300 degrees C. to 400 degrees C. Crystallization is initiated ifthe temperature is too high, and it is not possible to achievesufficient degreasing if the temperature is too low. Moreover, it ispreferable to perform the degreasing step at least for ten minutes. Inthis embodiment, in the degreasing step 202, the dried piezoelectricprecursor film 71 is degreased by raising the temperature to about 300degrees C. to 400 degrees C. and holding the piezoelectric precursorfilm 71 at the temperature for about 15 to 30 minutes as shown in FIG.7. Here, in this embodiment, it is most preferable to set thetemperature to be attained to about 320 degrees C. in the degreasingstep.

Meanwhile, the rate of temperature rise in the degreasing step is thekey to enhancing crystallinity of the piezoelectric layer. To be moreprecise, it is preferable to set the rate of temperature rise in therange from 0.5 to 1.5 (degrees C./sec) in the degreasing step. In thisway, it is possible to enhance (100) orientation strength of thepiezoelectric layer and to suppress unevenness in the orientationstrength in terms of the in-plane direction of the passage-formingsubstrate wafer.

Here, the “rate of temperature rise” will be defined as a rate oftemperature change with time consumed from a temperature higher than astarting temperature by 20% of a temperature difference which is adifference between a temperature when starting the heating (roomtemperature) and the attained temperature, until reaching a temperaturehigher by 80% of the temperature difference than the startingtemperature, as similar to the drying steps.

Here, the piezoelectric precursor film 71 is degreased while setting therate of temperature rise to about 1.0 (degree C./sec), about 1.6(degrees C./sec), and about 4.5 (degrees C./sec) and unevenness in the(100) orientation strength of the piezoelectric layer in terms of thein-plane direction of the passage-forming substrate wafer 110 isexamined in each case. To be more precise, the piezoelectric precursorfilm 71 is degreased at each of the rates of temperature rise describedabove by heating the passage-forming substrate wafer 110 by use of thejig having the predetermined thickness and in conditions of 320 degreesC. of temperature to be attained and 15 minutes of heating time.Thereafter, the piezoelectric layer is formed by executing a baking stepto be described later. Then, as shown in FIG. 8, the (100) orientationstrength is measured in multiple positions on an x axis in a horizontaldirection with respect to an orientation flat plane 110 a and on a yaxis in a perpendicular direction with respect thereto based on thecenter of the passage-forming substrate wafer 110 as a reference point.

FIGS. 9A to 9C are graphs showing the (100) orientation strength of thepiezoelectric layers. As shown in FIG. 9A, when the rate of temperaturerise is set to about 1.0 (degree C./sec), the (100) orientation strengthof the piezoelectric layer is greater than 140 (cps) in every positionof measurement. Accordingly, an excellent result is obtained. Meanwhile,as shown in FIG. 9B, when the rate of temperature rise is set to about1.6 (degrees C./sec), the (100) orientation strength of thepiezoelectric layer is relatively high at about 160 (cps) in a certainposition. However, unevenness in the orientation strength is moresignificant in terms of the in-plane direction of the wafer. It is to benoted, however, that an excellent result similar to the case of settingthe rate of temperature rise to about 1.0 (degree C./sec) is alsoobtained only occasionally when setting the rate of temperature rise toabout 1.6 (degrees C./sec).

On the contrary, as shown in FIG. 9C, when the rate of temperature riseis set to about 4.5 (degrees C./sec), the (100) orientation strength ofthe piezoelectric layer is considerably low at 100 (cps) or thereaboutin any position of measurement. Moreover, unevenness in the orientationstrength in the same wafer is relatively large at about 70 (cps) at themaximum. Accordingly, it is not possible to obtain a favorably result.

From these results, it is apparent that an excessive rate of temperaturerise in the degreasing step is not favorable because of degradation ofthe crystallinity of the piezoelectric layer, and that the piezoelectriclayer having the favorable crystallinity can be formed by relativelyslowing down the rate of temperature rise in the degreasing step toabout 1.5 (degrees C./sec) or below. In the meantime, it is notpreferable to set the rate of temperature rise too low because such anoperation leads to lower productivity. From these findings, it ispreferable to set the rate of temperature rise in the range from about0.5 to 1.5 (degrees C./sec) in the degreasing step.

Now, a cycle of the coating step, the first drying step, the seconddrying step, and the degreasing step is repeated for a predeterminednumber of times, such as twice in this embodiment, whereby piezoelectricprecursor film 72 having a predetermined thickness is formed as shown inFIG. 4B. In this embodiment, the piezoelectric precursor film 72 havingthe predetermined thickness is formed by repeating the cycle of thecoating step, the first drying step, the second drying step, and thedegreasing step is repeated twice. However, it is needless to say thatthe number of repetition of the cycle is not limited to twice. It ispossible to execute the cycle only once or more than twice.

Thereafter, this piezoelectric precursor film 72 is subjected to a heattreatment for crystallization, and is thereby formed into apiezoelectric layer 73 (a baking step) Baking conditions may varydepending on the material. For example, in this embodiment, thepiezoelectric precursor film 72 is baked by heating at a temperature of680 degrees C. or above for 5 to 30 minutes in the baking step 203 toform the piezoelectric film 73 as shown in FIG. 7. In addition to adiffusion furnace, it is also possible to use a rapid thermal annealing(RTA) device as a heating device, for example.

Now, by repeating the above-described cycle of the coating step, thefirst and second drying steps, the degreasing step, and the baking stepfor a number of times, the piezoelectric film 70 having thepredetermined thickness and including a plurality of piezoelectric films73, such as five layers in this embodiment, is formed as shown in FIG.4C. For example, if a film thickness is about 0.1 μm at each time ofcoating the sol, then the entire film thickness of the piezoelectriclayer 70 will be about 1 μm.

In this way, by independently performing the steps for heating thepiezoelectric precursor film 71, namely, the first drying step 200, thesecond drying step 201, the degreasing step 202, and the baking step 203(see FIG. 7), it is possible to form the piezoelectric layer 70 havingexcellent performances. In addition, by adjusting the temperature to beattained in the second drying step 201, it is possible to control thecrystal orientation of the piezoelectric layer. For example, since thecrystal system of the piezoelectric layer 70 according to thisembodiment has a rhombohedral system, it is preferable that the crystalsthereof are oriented to the (100) plane. Moreover, in this embodiment,it is possible to orient the crystals to the (100) plane by raising thetemperature higher than the boiling point of the solvent which is themain solvent of the sol in the second drying step 201. Here, if thetemperature to be attained in the second drying step 201 is set to atemperature lower than the boiling point of the solvent which is themain solvent of the sol, the crystals of the piezoelectric layer 70 areoriented to the (111) plane.

Now, FIG. 10 shows a relation between the attained temperature in thesecond drying step and the (100) plane orientation strength. The dataherein represent a case where 2-n-butoxyethanol having the boiling pointof 176 degrees C. is used as the solvent which is the main solvent ofthe sol and the piezoelectric precursor films are dried by use of abaking device.

As shown in FIG. 10, when the second drying step is executed by use ofthe baking device, the (100) orientation strength gradually increases ata temperature around 170 degrees C. and reaches a peak when thetemperature slightly exceeds the boiling point (176 degrees C.) of thesolvent by means of raising the temperature to be attained in the seconddrying step. Then the orientation strength suddenly drops at atemperature around 190 degrees C. Meanwhile, occurrence of tarnish isobserved outwardly when the temperature to be attained is set to 180degrees C. or above. It is apparent from the foregoing that the crystalorientation of the piezoelectric layer can be controlled by adjustingthe temperature to be attained in the second drying step. Particularly,in this embodiment, it is possible to orient the crystals of thepiezoelectric layer 70 to the (100) plane of the rhombohedral system byraising the temperature to be attained in the second drying step to atemperature higher than the boiling point of the solvent which is themain solvent of the sol. However, if the temperature to be attained isset too high in the second drying step, the (100) plane orientationstrength is reduced due to factors such as a chemical reaction caused bythe solvent. Accordingly, it is preferable to set the temperature to beattained in the second drying step 201 to a temperature slightly higherthan the boiling point of the solvent.

Although the data in FIG. 10 represent the case of drying thepiezoelectric precursor films 71 by use of the baking device, therelation between the attained temperature and the crystal orientation inthe second drying step turns out to be different when drying thepiezoelectric precursor films 71 by use of a clean oven. FIG. 11 shows arelation between the attained temperature and a degree of (100)orientation in a case of executing the second drying step by use of theclean oven. Here, the “degree of orientation” means a ratio ofdiffraction intensity generated when the piezoelectric layer is measuredby use of a wide angle X-ray diffraction method. Specifically, when thepiezoelectric layer is measured in accordance with the wide angle X-raydiffraction method, peaks of diffraction intensity corresponding to the(100) plane, the (110) plane, and the (111) plane are observed. The“degree of (100) orientation” means a ratio of the peak intensitycorresponding to the (100) plane relative to the sum of the peakintensities corresponding to the respective planes.

As shown in FIG. 11, when the second drying step is executed by use ofthe clean oven, the degree of (100) orientation gradually increases bymeans of raising the attained temperature in the second drying step, andreaches nearly 100% when the temperature is equal to or above theboiling point (176 degrees C.) of the solvent. Then the degree of (100)orientation drops when the temperature exceeds 250 degrees C.

It is apparent from the foregoing that the crystal orientation of thepiezoelectric layer can be controlled by adjusting the temperature to beattained in the second drying step, although the appropriate temperaturerange may vary depending on the heating device used in the second dryingstep. Particularly, it is possible to form the favorable piezoelectriclayer by raising the temperature slightly higher than the boiling pointof the solvent.

Moreover, according to the manufacturing method of the presentinvention, it is also possible to enhance electrical characteristics ofthe piezoelectric layer 70 by executing the second drying step. Here, apiezoelectric layer (Example) subjected to the second drying step (at180 degrees C. for 10 minutes) and a piezoelectric layer (ComparativeExample) not subjected to the second drying step are formed on eachcertain substrate, and a relation between an inclination of the (100)plane relative to a surface of the substrate and the (100) planeorientation strength is examined in terms of each of the piezoelectriclayers. The result is shown in FIG. 12. Here, the X-axis of the graphshown in FIG. 12 represents the angle of inclination in a normal linedirection of the (100) plane of the piezoelectric layer relative to thesurface of the substrate.

As shown in FIG. 12, when the angle of inclination is 90 degrees and the(100) plane of each of the piezoelectric layers is almost parallel tothe surface of the substrate, the piezoelectric layer of the Exampleshows the (100) plane orientation strength higher than that of thepiezoelectric layer of the Comparative Example. Therefore, it can besaid that the piezoelectric layer of the Example has smaller deviationbetween a direction of an electric field upon application of a voltageto the piezoelectric layer and a direction of a polarization axis ascompared to the piezoelectric layer of the Comparative Example. That is,it is apparent from the foregoing that the electrical characteristics ofthe piezoelectric layer 70 can be enhanced by executing the seconddrying step.

In addition, it is possible to control grain sizes of the piezoelectriclayer 70 by adjusting an initial rate of temperature rise in the seconddrying step 201. Here, the initial rate of temperature rise is a rate oftemperature rise in the beginning of heating, or more precisely at leastin the first 1 minute of rise time. For example, when using ethanolhaving a boiling point of 7-8 degrees C. as the main solvent of the sol,the grain sizes become equal to or less than 500 nm as shown in ascanning electron microscopic (SEM) image in FIG. 13A by setting therate of initial temperature rise in the second drying step 201 equal toor below 70 degrees C./min. Meanwhile, when the initial rate oftemperature rise is set equal to or above 100 degrees C./min, themajority of the grain sizes become equal to or above 1000 nm as shown inan SEM image in FIG. 13B. Here, the grain sizes mean the width of thegrains in terms of a plane direction which is parallel to the substrate.

By controlling the grain sizes of the piezoelectric layer 70 asdescribed above, it is possible to control mechanical characteristics ofthe piezoelectric layer 70 such as Young's modulus. In addition, bycontrolling density of crystal grain boundary in the piezoelectric layer70, it is also possible to control a coercive electric field whichdepends on density of grain boundary. Accordingly, the piezoelectricelement 300 having a desired displacement characteristic can be formed.Note that it is also possible to form the piezoelectric layer 70 byexecuting a heating process including three steps of the first dryingstep 200, a degreasing step 205 which also serves as the second dryingstep, and the baking step 203 as shown in FIG. 14, for example, insteadof executing the first drying step 200, the second drying step 201, thedegreasing step 202, and the baking step 203 independently.Nevertheless, when the piezoelectric layer 70 is formed by the heatingprocess including the above-described three steps, it is difficult tocontrol the grain sizes of the piezoelectric layer 70. In addition, itis also difficult to control the orientation of the crystals of thepiezoelectric layer 70. For example, if the piezoelectric layer adoptsthe rhombohedral system as described in this embodiment, the crystalsare oriented to the (111) plane in which it is difficult to obtainsufficient piezoelectric characteristics as compared to the (100) plane.

In this embodiment, the piezoelectric layer 70 is formed by performingthe first drying step 200, the second drying step 201, the degreasingstep 202, and the baking step 203 independently as shown in FIG. 7.However, the present invention is not limited to the foregoing. Forexample, as shown in FIG. 15, it is also possible to perform continuousheating throughout the first and second drying steps 200 and 201, thedegreasing step 202, and the baking step 203 without lowering thetemperature in the consecutive steps. Specifically, as shown in FIG. 15,it is possible to perform continuous heating in the second drying step201 starting from the processing temperature for the first drying step200 to the processing temperature for the second drying step 201.Moreover, it is possible to perform continuous heating in the degreasingstep 202 starting from the processing temperature for the second dryingstep 201 to the processing temperature for the degreasing step 202.Furthermore, it is possible to perform continuous heating in the bakingstep 203 starting from the processing temperature for the degreasingstep 202 to the processing temperature for the baking step 203.

A rapid thermal processing (RTP) device configured to perform heating byirradiation with an infrared lamp may be used as a heating device whichcan perform continuous heating in the respective steps of the first andsecond drying steps 200 and 201, the degreasing step 202, and the bakingstep 203 without lowering the processing temperature between a precedentstep and a subsequent step. This RTP device can control the rate oftemperature rise freely from 0 to 15 degrees C./sec in a temperaturerange from a room temperature to about 800 degrees C., thus satisfyingthe heating conditions for the first and second drying steps 200 and201, the degreasing step 202, and the baking step 203.

As described above, by performing the continuous heating in theconsecutive steps of the first and second drying steps 200 and 201, thedegreasing step 202, and the baking step 203 without lowering thetemperature, it is not necessary to again perform heating in thesubsequent step to achieve the process temperature of the precedingstep. Accordingly, it is possible to shorten time for the heat treatmentin the respective steps and to reduce manufacturing costs withoutwasting energy for the heating. Moreover, by using the same heatingdevice throughout the steps, it is possible to omit the work for movingthe passage-forming substrate wafer 110 to a different device. Bysimplifying the work, it is possible to enhance productivity.

Here, actual temperatures and variations thereof in predeterminedpositions in an in-plane direction of a thermocouple instrumented waferare examined in terms of two cases of heating the thermocoupleinstrumented wafer with the hot plate and of heating the thermocoupleinstrumented wafer with the RTP device. To be more precise, thedegreasing step is performed, in which the thermocouple instrumentedwafers are heated from room temperature to 320 degrees C. by using thehot plate and the RTP device, respectively. Then, the actualtemperatures in the predetermined positions 1 to 5 in terms of thein-plane direction of the thermocouple instrumented wafer 110A aremeasured at 200 degrees C. in the course of heating and at the attainedtemperature of 320 degrees C. as shown in FIG. 16. Results are shown inFIGS. 17A and 17B. Here, FIG. 17A is a graph showing the temperatures inthe case of heating the thermocouple instrumented wafer with the hotplate, and FIG. 17B is a graph showing the temperatures in the case ofheating the thermocouple instrumented wafer with the RTP device.

As shown in FIG. 17A, when the thermocouple instrumented wafer 110A isheated with the hot plate, the temperature variations in terms of thein-plane direction at 200 degrees C. in the course of heating and at theattained temperature of 320 degrees C. are about 24 degrees C. and about10 degrees C., respectively. On the contrary, as shown in FIG. 17B, whenthe thermocouple instrumented wafer 110A is heated with the RTP device,the temperature variations in terms of the in-plane direction at 200degrees C. in the course of heating and at the attained temperature of320 degrees C. are about 8 degrees C. and about 6 degrees C.,respectively. Accordingly, by executing the heat treatment with the RTPdevice, it is possible to enhance uniformity of the heat on the waferand thereby to obtain uniform characteristics in terms of the in-planedirection of the piezoelectric layer 70.

Note that it is not always necessary to perform the continuous heatingthroughout the consecutive steps of the first and second drying steps200 and 201, the degreasing step 202, and the baking step 203 withoutlowering the temperature as described above. Instead, the continuousheating may be performed in at least two consecutive steps among thefirst drying step 200, the second drying step 201, the degreasing step202, and the baking step 203 without lowering the temperature. Forexample, in case of repeating the cycle from the coating step to thedegreasing step 202 twice and then executing the baking step 203 asdescribed in the embodiment, it is possible to perform the continuousheating from the first drying step 200 to the degreasing step 202 in thefirst cycle without lowering the temperature, then to perform thecoating step after cooling down to a room temperature, and then toperform the continuous heating from the first drying step 200 to thebaking step 203 in the second cycle without lowering the temperature. Inthis case as well, it is also possible to shorten time for the heattreatment and to reduce manufacturing costs.

After forming the piezoelectric layer 70 as described above, the upperelectrode film 80 made of iridium, for example, is formed on the entiresurface of the passage-forming substrate wafer 110 as shown in FIG. 5A.Subsequently, as shown in FIG. 5B, the piezoelectric layer 70 and theupper electrode film 80 are patterned into a region corresponding toeach of the respective pressure generating chambers 12 to form thepiezoelectric element 300. Next, the lead electrode 90 is formed. To bemore precise, a metal layer 91 made of gold (Au) or the like, forexample, is formed on the entire surface of the passage-formingsubstrate wafer 110 as shown in FIG. 5C. Thereafter, the lead electrodes90 are formed in conformity to the respective piezoelectric elements 300by patterning the metal layer 91 through a mask pattern (not shown) madeof resist or the like, for example.

Next, as shown in FIG. 5D, a protective plate wafer 130 made of asilicon wafer and constituting a plurality of protective plates 30 isjoined to the piezoelectric element 300 side of the passage-formingsubstrate wafer 110. Here, this protective plate wafer 130 has athickness of about 400 μm, for example. Accordingly, the stiffness ofthe passage-forming substrate wafer 110 is significantly enhanced byjoining the protective plate wafer 130 thereto.

Subsequently, the passage-forming substrate wafer 110 is ground to acertain thickness as shown in FIG. 6A. Thereafter, the passage-formingsubstrate wafer 110 is further adjusted to a predetermined thickness byperforming wet etching with hydrofluoric acid. For example, thepassage-forming substrate wafer 110 is etched to adjust the thickness toabout 70 μm in this embodiment. Subsequently, as shown in FIG. 6B, amask film 52 made of silicon nitride (SiN), for example, is newly formedon the passage-forming substrate wafer 110, and the mask film 52 ispatterned into a predetermined shape. Then, the passage-formingsubstrate wafer 110 is subjected to anisotropic etching through thismask film 52, whereby the pressure generating chambers 12, thecommunicating portion 13, the ink supply paths 14, and the like areformed on the passage-forming substrate wafer 110 as shown in FIG. 6C.

Thereafter, unnecessary portions in the periphery portions of thepassage-forming substrate wafer 110 and of the protective plate wafer130 are cut out and removed by dicing or the like. Then, the nozzleplate 20 having the nozzle orifices 21 drilled thereon is joined to thepassage-forming substrate wafer 110 on the opposite surface to theprotective plate wafer 130. In addition; the compliance plate 40 isjoined to the protective plate wafer 130, and then the passage-formingsubstrate wafer 110 and other constituents thereon are divided into thepassage-forming substrates 10 each having one chip size as shown inFIG. 1. In this way, the inkjet recording head of this embodiment isformed.

(Other Embodiments)

The present invention has been described above based on a certainembodiment. However, the present invention will not be limited only tothe foregoing embodiment. Moreover, although the above embodiment hasdescribed the present invention based on the inkjet recording head as anexample, it is by all means possible to apply the present invention toelements configured to eject liquids other than ink. Such liquid jetheads may include various recording head used in image recording devicessuch as printers, coloring material jet heads used for manufacturingcolor filters for liquid crystal displays and the like, electrodematerial jet heads used for forming electrodes such as in organicelectroluminescence (EL) displays or field emission displays (FEDs),living organic material jet heads used in manufacturing biochips, andthe like.

Moreover, the present invention is not limited only to the method ofmanufacturing a liquid jet head including a piezoelectric element. Inother words, it is needless to say that the present invention is notlimited only to the method of manufacturing a piezoelectric layer madeof a piezoelectric material, but is applicable when manufacturing adielectric film made of any kinds of dielectric materials.

1. A method of manufacturing a dielectric film comprising: a coatingstep of coating sol made of an organic metal compound and forming adielectric precursor film; a drying step of drying the dielectricprecursor film; a degreasing step of degreasing the dielectric precursorfilm; and a baking step of baking the dielectric precursor film to forma dielectric film, wherein the drying step includes: a first drying stepof drying the dielectric precursor film by heating the dielectricprecursor film to a temperature lower than a boiling point of a solventwhich is a main solvent of the sol and then holding the dielectricprecursor film at the temperature for a predetermined period of time;and a second drying step of drying the dielectric precursor film furtherby reheating the dielectric precursor film and then holding thedielectric precursor film at the temperature for a predetermined periodof time.
 2. The method of manufacturing a dielectric film according toclaim 1, wherein the method comprises the first drying step, the seconddrying step, the degreasing step, and the baking step independently. 3.The method of manufacturing a dielectric film according to claim 1,wherein heating is continuously performed without lowering thetemperature in at least two consecutive steps out of the first dryingstep, the second drying step, the degreasing step, and the baking step.4. The method of manufacturing a dielectric film according to claim 3,wherein the heating is continuously performed without lowering thetemperature in the consecutive steps of the first and second dryingsteps, the degreasing step, and the baking step.
 5. The method ofmanufacturing a dielectric film according to claim 3, wherein at leasttwo consecutive steps out of the first drying step, the second dryingstep, the degreasing step, and the baking step are performed by use of arapid thermal processing device.
 6. The method of manufacturing adielectric film according to claim 1, wherein crystals are subjected topreferred orientation along a (100) plane of a rhombohedral system byadjusting a temperature to be attained in the second drying step.
 7. Themethod of manufacturing a dielectric film according to claim 1, whereingrain sizes are controlled by adjusting a rate of temperature rise inthe second drying step.
 8. The method of manufacturing a dielectric filmaccording to claim 1, wherein the dielectric precursor film is heated toa temperature higher by a range from 100 degrees C. to 300 degrees C.inclusive than the boiling point of the solvent in the degreasing step.9. The method of manufacturing a dielectric film according to any ofclaims 1 to 8, wherein the dielectric precursor film is heated to atemperature higher by at least 400 degrees C. than the boiling point ofthe solvent in the baking step.
 10. A method of manufacturing a liquidjet head comprising the step of: forming a piezoelectric element, in aregion opposed to each pressure generating chamber communicating witheach nozzle orifice for ejecting a droplet, through a vibration plateconstituting one side of the pressure generating chamber, wherein thestep of forming a piezoelectric element includes the steps of: forming alower electrode film on the vibration plate; forming a piezoelectriclayer on the lower electrode film; and forming an upper electrode filmon the piezoelectric layer, and wherein the piezoelectric layer composedof a plurality of piezoelectric films is laminated by repeatedlyperforming a piezoelectric layer forming process of: a step of coatingsol made of an organic metal compound and forming a piezoelectricprecursor film; a first drying step of drying the piezoelectricprecursor film by heating the piezoelectric precursor film to atemperature lower than a boiling point of a solvent which is a mainsolvent of the sol and then holding the piezoelectric precursor film atthe temperature for a predetermined period of time; a second drying stepof further drying the piezoelectric precursor film by heating thepiezoelectric precursor film to a temperature equal to or higher thanthe boiling point of the solvent and then holding the piezoelectricprecursor film at the temperature for a predetermined period of time; adegreasing step of degreasing the piezoelectric precursor film byheating the piezoelectric precursor film to a temperature higher thanthe boiling point of the solvent; and a baking step of baking thepiezoelectric precursor film to crystallize the piezoelectric precursorfilm into the piezoelectric film.
 11. The method of manufacturing aliquid jet head according to claim 10, wherein the method includes thefirst drying step, the second drying step, the degreasing step, and thebaking step independently.
 12. The method of manufacturing a liquid jethead according to claim 10, wherein heating is continuously performedwithout lowering the temperature in at least two consecutive steps outof the first drying step, the second drying step, the degreasing step,and the baking step.